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Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4754829· OSTI ID:1381699
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1381699
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 112; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (13)

Growth and Luminescence Properties of Mg-Doped GaN Prepared by MOVPE journal January 1990
Optical emission characteristics of semipolar (1\,1\,\bar{2}\,2) GaN light-emitting diodes grown on m-sapphire and stripe-etched r -sapphire journal January 2012
Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy journal October 2003
Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities journal May 1999
Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency journal May 2005
Nature of the 2.8 eV photoluminescence band in Mg doped GaN journal March 1998
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes journal August 2003
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes journal February 2009
Origin of forward leakage current in GaN-based light-emitting devices journal September 2006
Light-Emitting Diodes book January 2006
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices journal October 1996
Luminescence properties of defects in GaN journal March 2005
Ionization Interaction between Impurities in Semiconductors and Insulators journal May 1956

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