Effects of polarization-field tuning in GaInN light-emitting diodes

Xu, Jiuru; Schubert, Martin F.; Zhu, Di; Cho, Jaehee; Schubert, E. Fred; Shim, Hyunwook; Sone, Cheolsoo

doi:10.1063/1.3609783

Effects of polarization-field tuning in GaInN light-emitting diodes

Journal Article · Mon Jul 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3609783· OSTI ID:1383686

Xu, Jiuru; Schubert, Martin F.; Zhu, Di; Cho, Jaehee; Schubert, E. Fred; Shim, Hyunwook; Sone, Cheolsoo

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1383686

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 99; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (18)

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Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu Applied Physics Letters, Vol. 93, Issue 4 https://doi.org/10.1063/1.2963029	journal	July 2008
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory Zoroddu, Agostino; Bernardini, Fabio; Ruggerone, Paolo Physical Review B, Vol. 64, Issue 4 https://doi.org/10.1103/PhysRevB.64.045208	journal	July 2001
Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee Applied Physics Letters, Vol. 96, Issue 12 https://doi.org/10.1063/1.3371812	journal	March 2010
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures Fiorentini, Vincenzo; Bernardini, Fabio; Ambacher, Oliver Applied Physics Letters, Vol. 80, Issue 7 https://doi.org/10.1063/1.1448668	journal	February 2002
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4A https://doi.org/10.1143/JJAP.36.L382	journal	April 1997
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi Applied Physics Letters, Vol. 85, Issue 15 https://doi.org/10.1063/1.1804607	journal	October 2004
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Accurate calculation of polarization-related quantities in semiconductors Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David Physical Review B, Vol. 63, Issue 19 https://doi.org/10.1103/PhysRevB.63.193201	journal	April 2001
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm Pope, I. A.; Smowton, P. M.; Blood, P. Applied Physics Letters, Vol. 82, Issue 17 https://doi.org/10.1063/1.1570515	journal	April 2003
Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells Schubert, Martin F.; Schubert, E. Fred Applied Physics Letters, Vol. 96, Issue 13 https://doi.org/10.1063/1.3373610	journal	March 2010
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3058687	journal	January 2009
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822442	journal	December 2007
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 Gardner, N. F.; Müller, G. O.; Shen, Y. C. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2807272	journal	December 2007
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Defect related issues in the “current roll-off” in InGaN based light emitting diodes Monemar, B.; Sernelius, B. E. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2801704	journal	October 2007

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