Tailoring Heterovalent Interface Formation with Light

Park, Kwangwook; Alberi, Kirstin

doi:10.1038/s41598-017-07670-2

Tailoring Heterovalent Interface Formation with Light

Journal Article · Thu Aug 17 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-07670-2· OSTI ID:1378895

Park, Kwangwook ^[1]; Alberi, Kirstin ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interface between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of UV illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. Furthermore, these results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1378895

Report Number(s):: NREL/JA--5K00-68795

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation Park, Kwangwook; Kim, Jongmin; Alberi, Kirstin Journal of Applied Physics, Vol. 124, Issue 22 https://doi.org/10.1063/1.5053216	journal	December 2018
Defects in C d 3 A s 2 epilayers via molecular beam epitaxy and strategies for reducing them Rice, A. D.; Park, K.; Hughes, E. T. Physical Review Materials, Vol. 3, Issue 12 https://doi.org/10.1103/physrevmaterials.3.121201	journal	December 2019

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
UV illumination
interface properties
molecular beam epitaxy

Tailoring Heterovalent Interface Formation with Light

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