An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7115811

Menke, D R; Qiu, J; Gunshor, R L; Kobayashi, M; Li, D; Nakamura, Y; Otsuka, N ^[1]

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1. Purdue Univ., West Lafayette, IN (United States)

In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga{sub 2}Se{sub 3}. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga{sub 2}Se{sub 3} epilayers, clearly indicate the same Se bonding characteristic for the Se-reacmiteted layer, and the Ga{sub 2}Se{sub 3} epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI on III-V junction.

• OSTI ID: 7115811
• Report Number(s): CONF-910115-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
BINDING ENERGY
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
ZINC SELENIDES
CRYSTAL LATTICES
GALLIUM SELENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
X-RAY SPECTROSCOPY
ZINC SULFIDES
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
ENERGY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
PHOSPHORS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
360602* - Other Materials- Structure & Phase Studies