Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation

Park, Kwangwook; Kim, Jongmin; Alberi, Kirstin

doi:10.1063/1.5053216

Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation

Journal Article · Mon Dec 10 23:00:00 EST 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5053216· OSTI ID:1489328

Park, Kwangwook ^[1]; Kim, Jongmin ^[2]; Alberi, Kirstin ^[3]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Korea Advanced Nano Fab Center, Suwon (Republic of Korea)
Korea Advanced Nano Fab Center, Suwon (Republic of Korea)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Incorporating dissimilar semiconductors into a single platform can offer additional degrees of freedom for optoelectronic device design. However, bonding of elements with mixed valence at heterovalent interfaces often leads to defect formation and poor material quality. In this work, using ZnSe/GaAs as a model system, we investigate the use of above-bandgap photon irradiation in combination with elemental surface treatments as a route to modify the interface properties. We find that this approach produces large changes in the behavior of the interfaces. Specifically, treating the GaAs surface with light and a short exposure to Se flux results in strong excitonic emission from both layers and an abrupt interface between them. We propose that these improvements arise from controlled desorption of As atoms from the GaAs surface and the subsequent Se enrichment of the interface. In conclusion, these results suggest that illumination with above-bandgap photons and proper choice of elemental exposure prior to heterovalent epitaxial layer growth may aid the synthesis of heterovalent semiconductor heterostructures.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1489328

Report Number(s):: NREL/JA--5K00-72855

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 124; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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