Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.

Conference ·
OSTI ID:1378868
; ; ; ; ; ; ; ;

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1378868
Report Number(s):
SAND2016-8439C; 646970
Country of Publication:
United States
Language:
English

Similar Records

An AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.
Conference · Wed Jun 01 00:00:00 EDT 2016 · OSTI ID:1366827
Ohmic Contacts to Al0.85Ga0.15N/Al0.7Ga0.3N Heterostructure.
Conference · Tue Nov 01 00:00:00 EDT 2016 · OSTI ID:1420813
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Conference · Sat Sep 01 00:00:00 EDT 2012 · OSTI ID:1116380

Related Subjects