Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.
Conference
·
OSTI ID:1378868
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1378868
- Report Number(s):
- SAND2016-8439C; 646970
- Resource Relation:
- Conference: Proposed for presentation at the Lester Eastman Conference on High Performance Devices held August 2-4, 2016 in Bethlehem, PA.
- Country of Publication:
- United States
- Language:
- English
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