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An AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact.

Conference ·
OSTI ID:1366827
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1366827
Report Number(s):
SAND2016-5836C; 642225
Country of Publication:
United States
Language:
English

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