Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Reliable High-Performance Gate Oxides for Wide Band Gap Devices.

Conference ·
OSTI ID:1377702
; ; ; ; ; ; ; ; ;
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Electricity Delivery and Energy Reliability (OE)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1377702
Report Number(s):
SAND2016-7875C; 646600
Country of Publication:
United States
Language:
English

Similar Records

Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Conference · Tue Sep 01 00:00:00 EDT 2015 · OSTI ID:1325523
Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Conference · Tue Sep 01 00:00:00 EDT 2015 · OSTI ID:1323048
Reliable High-Performance Gate Oxides for Wide Band Gap Devices.
Conference · Tue Oct 01 00:00:00 EDT 2013 · OSTI ID:1114585

Related Subjects