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Title: Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Abstract

The In-doped SnTe nanowire surface is composed of In 2O 3, SnO 2, Te and TeO 2 which can be readily removed by argon ion sputtering.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [2];  [3];  [2]; ORCiD logo [2];  [4]; ORCiD logo [1]
  1. Indiana Univ., Bloomington, IN (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. at Buffalo - The State Univ. of New York, Buffalo, NY (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1377605
Alternate Identifier(s):
OSTI ID: 1407898
Report Number(s):
SAND-2017-9019J; LA-UR-17-27136
Journal ID: ISSN 2040-3364; NANOHL; 656453
Grant/Contract Number:  
AC04-94AL85000; AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 9; Journal Issue: 35; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; Material Science

Citation Formats

Li, Zhen, Xu, Enzhi, Losovyj, Yaroslav, Li, Nan, Chen, Aiping, Swartzentruber, Brian, Sinitsyn, Nikolai, Yoo, Jinkyoung, Jia, Quanxi, and Zhang, Shixiong. Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires. United States: N. p., 2017. Web. doi:10.1039/C7NR04934J.
Li, Zhen, Xu, Enzhi, Losovyj, Yaroslav, Li, Nan, Chen, Aiping, Swartzentruber, Brian, Sinitsyn, Nikolai, Yoo, Jinkyoung, Jia, Quanxi, & Zhang, Shixiong. Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires. United States. doi:10.1039/C7NR04934J.
Li, Zhen, Xu, Enzhi, Losovyj, Yaroslav, Li, Nan, Chen, Aiping, Swartzentruber, Brian, Sinitsyn, Nikolai, Yoo, Jinkyoung, Jia, Quanxi, and Zhang, Shixiong. Tue . "Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires". United States. doi:10.1039/C7NR04934J. https://www.osti.gov/servlets/purl/1377605.
@article{osti_1377605,
title = {Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires},
author = {Li, Zhen and Xu, Enzhi and Losovyj, Yaroslav and Li, Nan and Chen, Aiping and Swartzentruber, Brian and Sinitsyn, Nikolai and Yoo, Jinkyoung and Jia, Quanxi and Zhang, Shixiong},
abstractNote = {The In-doped SnTe nanowire surface is composed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ion sputtering.},
doi = {10.1039/C7NR04934J},
journal = {Nanoscale},
issn = {2040-3364},
number = 35,
volume = 9,
place = {United States},
year = {2017},
month = {8}
}

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Works referenced in this record:

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