Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
- Indiana Univ., Bloomington, IN (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. at Buffalo - The State Univ. of New York, Buffalo, NY (United States)
The In-doped SnTe nanowire surface is composed of In2O3, SnO2, Te and TeO2which can be readily removed by argon ion sputtering.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396
- OSTI ID:
- 1377605
- Alternate ID(s):
- OSTI ID: 1407898
- Report Number(s):
- SAND-2017-9019J; LA-UR-17-27136; NANOHL; 656453
- Journal Information:
- Nanoscale, Vol. 9, Issue 35; ISSN 2040-3364
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 15 works
Citation information provided by
Web of Science
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