Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

doi:10.1039/C6NR03621J

Title: Charge transfer in crystalline germanium/monolayer MoS ₂ heterostructures prepared by chemical vapor deposition

Journal Article · Wed Sep 21 00:00:00 EDT 2016 · Nanoscale

DOI:https://doi.org/10.1039/C6NR03621J· OSTI ID:1375868

Lin, Yung-Chen ^[1]; Bilgin, Ismail ^[2];

^[3]; Chen, Renjie ^[4]; Pete, Doug ^[5]; Kar, Swastik ^[6];

^[3]; Gupta, Gautam ^[7];

^[7];

^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
Northeastern Univ., Boston, MA (United States). Dept. of Physics; Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Physics and Applications-11
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Northeastern Univ., Boston, MA (United States). Dept. of Physics
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Physics and Applications-11

Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also we report a novel heterostructure composed of Ge and monolayer MoS₂, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS₂. The electrical characteristics of Ge and MoS₂ in the Ge/MoS₂ heterostructure were remarkably different from those of isolated Ge and MoS₂. The field-effect conductivity type of the monolayer MoS₂ is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS₂ is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1375868

Report Number(s):: LA-UR-16-22544; NANOHL

Journal Information:: Nanoscale, Vol. 8, Issue 44; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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