Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Surface passivation for CdTe devices

Patent ·
OSTI ID:1373708

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC
Patent Number(s):
9,722,111
Application Number:
14/615,282
OSTI ID:
1373708
Country of Publication:
United States
Language:
English

References (6)

Polycrystalline CdTe thin films for photovoltaic applications journal December 2006
Surface passivation by sulfur treatment of undoped p-CdTe(100) journal August 2000
Luminescence effects of ion-beam bombardment of CdTe surfaces journal September 2009
Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage journal November 1986
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal August 2013
Time-resolved photoluminescence studies of CdTe solar cells journal September 2003

Similar Records

Intrinsic surface passivation of CdTe
Journal Article · Wed Oct 21 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:1225933

Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material
Patent · Mon Nov 24 23:00:00 EST 2014 · OSTI ID:1164345

Method of passivating semiconductor surfaces
Patent · Sun Dec 31 23:00:00 EST 1989 · OSTI ID:867428

Related Subjects