Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga2O3 nanocrystalline films

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; Ramana, C. V.

doi:10.1016/J.CPLETT.2017.06.063

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga₂O₃ nanocrystalline films

Journal Article · Sat Jul 01 00:00:00 EDT 2017 · Chemical Physics Letters

DOI:https://doi.org/10.1016/J.CPLETT.2017.06.063· OSTI ID:1368411

Battu, Anil K. ^[1]; Manandhar, S. ^[2]; Shutthanandan, V. ^[3]; Ramana, C. V. ^[1]

Univ. of Texas, El Paso, TX (United States). Dept. of Mechanical Engineering
Univ. of Texas, El Paso, TX (United States). Dept. of Mechanical Engineering; Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)

Here, an approach is presented to design refractory-metal incorporated Ga₂O₃-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga₂O₃ was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga₂O₃), higher Mo-content results in amorphization. Chemically-induced band gap variability (E_g ~ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: AC05-76RL01830

OSTI ID:: 1368411

Alternate ID(s):: OSTI ID: 1576817
OSTI ID: 22927142
OSTI ID: 1390408

Journal Information:: Chemical Physics Letters, Journal Name: Chemical Physics Letters Journal Issue: C Vol. 684; ISSN 0009-2614

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Effect of Ti doping on the crystallography, phase, surface/interface structure and optical band gap of Ga2O3 thin films Manandhar, Sandeep; Battu, Anil K.; Tan, Susheng Journal of Materials Science, Vol. 54, Issue 17 https://doi.org/10.1007/s10853-019-03663-w	journal	May 2019
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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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