Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Gokhale, Sasmit S.; Han, HyukSu; Pelaez, Oswaldo; Baciak, James E.; Nino, Juan C.; Jordan, Kelly A.

doi:10.1016/j.radmeas.2016.04.004

Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Journal Article · Wed Apr 13 00:00:00 EDT 2016 · Radiation Measurements

DOI:https://doi.org/10.1016/j.radmeas.2016.04.004· OSTI ID:1366760

Gokhale, Sasmit S. ^[1]; Han, HyukSu ^[2]; Pelaez, Oswaldo ^[2]; Baciak, James E. ^[2]; Nino, Juan C. ^[2]; Jordan, Kelly A. ^[2]

Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; University of Florida
Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

We fabricated antimony (Sb) doped bismuth tri-iodide (BiI₃) radiation detectors from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (²⁴¹Am) gamma-ray source at room temperature. The first successful use of BiI₃ detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 x 10^-4 cm²/V.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: FG52-09NA29358; NA0002534

OSTI ID:: 1366760

Alternate ID(s):: OSTI ID: 1357832

Journal Information:: Radiation Measurements, Journal Name: Radiation Measurements Journal Issue: C Vol. 91; ISSN 1350-4487

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Optical and electronic anisotropies in perovskitoid crystals of Cs ₃ Bi ₂ I ₉ studies of nuclear radiation detection Sun, Qihao; Xu, Yadong; Zhang, Hongjian Journal of Materials Chemistry A, Vol. 6, Issue 46 https://doi.org/10.1039/c8ta09525f	journal	January 2018
Room temperature semiconductor detectors for nuclear security Johns, Paul M.; Nino, Juan C. Journal of Applied Physics, Vol. 126, Issue 4 https://doi.org/10.1063/1.5091805	journal	July 2019
Electrical properties of x-ray detector based on bismuth tri-iodide single crystal with electrode configuration considering Liu, Yizhen; Sun, Hui; Yang, Dingyu Materials Research Express, Vol. 6, Issue 5 https://doi.org/10.1088/2053-1591/aaff87	journal	February 2019

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