Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

The growth and crystallography of bismuth tri-iodide crystals grown by vapor transport

Technical Report ·
DOI:https://doi.org/10.2172/105857· OSTI ID:105857
 [1];  [2]
  1. EG and G Energy Measurements, Inc., Goleta, CA (United States). Santa Barbara Operations
  2. CAMET Research, Inc., Goleta, CA (United States)
A single crystal of bismuth tri-iodide (BiI{sub 3}) of dimensions 1.2 {times} 1.2 {times} 0.4 cm{sup 3} has been grown by physical vapor transport. The lattice parameters of the hexagonal crystal and its polycrystaleme powder precursor were measured by x-ray diffraction (XRD) and were in agreement, indicating that the vapor phase growth and sublimation purification processing at temperatures below 330{degree}C did not significantly affect the stoichiometry. X-ray rocking measurements of the single crystal showed low angle boundaries of the order of 0.05{degree}. In tests as gamma radiation detectors, neither melt grown nor vapor grown crystals were satisfactory, but the vapor grown crystals were promising. Several observations suggest that better performance may be achievable with purer bismuth tri-iodide.
Research Organization:
EG and G Energy Measurements, Inc., Goleta, CA (United States). Santa Barbara Operations; CAMET Research, Inc., Goleta, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC08-93NV11265
OSTI ID:
105857
Report Number(s):
EGG--11265-1120; ON: DE96000160
Country of Publication:
United States
Language:
English

Similar Records

Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors
Journal Article · Tue Apr 12 20:00:00 EDT 2016 · Radiation Measurements · OSTI ID:1366760

Elemental impurity analysis of mercuric iodide by ICP/MS
Conference · Wed Jun 01 00:00:00 EDT 1994 · OSTI ID:10159296

New and revised methods of purifying mercuric iodide
Conference · Mon Dec 31 23:00:00 EST 1984 · OSTI ID:5782984