Underpotential deposition-mediated layer-by-layer growth of thin films
Patent
·
OSTI ID:1366730
A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886
- Assignee:
- Brookhaven Science Associates, LLC
- Patent Number(s):
- 9,689,085
- Application Number:
- 14/689,708
- OSTI ID:
- 1366730
- Resource Relation:
- Patent File Date: 2015 Apr 17
- Country of Publication:
- United States
- Language:
- English
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