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Title: Underpotential deposition-mediated layer-by-layer growth of thin films

Abstract

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179806
Patent Number(s):
9,034,165
Application Number:
13/000,800
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) CHO
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Wang, Jia Xu, and Adzic, Radoslav R. Underpotential deposition-mediated layer-by-layer growth of thin films. United States: N. p., 2015. Web.
Wang, Jia Xu, & Adzic, Radoslav R. Underpotential deposition-mediated layer-by-layer growth of thin films. United States.
Wang, Jia Xu, and Adzic, Radoslav R. Tue . "Underpotential deposition-mediated layer-by-layer growth of thin films". United States. doi:. https://www.osti.gov/servlets/purl/1179806.
@article{osti_1179806,
title = {Underpotential deposition-mediated layer-by-layer growth of thin films},
author = {Wang, Jia Xu and Adzic, Radoslav R.},
abstractNote = {A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 19 00:00:00 EDT 2015},
month = {Tue May 19 00:00:00 EDT 2015}
}

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Works referenced in this record:

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