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Title: Sputtering of pure boron using a magnetron without a radio-frequency supply

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [3];  [1]
  1. Institute of High Current Electronics SB RAS, 2/3 Academichesky Ave., Tomsk 634055, Russia, Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050, Russia
  2. Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  3. Institute of High Current Electronics SB RAS, 2/3 Academichesky Ave., Tomsk 634055, Russia
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361821
Grant/Contract Number:
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 88; Journal Issue: 4; Related Information: CHORUS Timestamp: 2018-02-14 20:23:53; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Oks, Efim, Anders, André, Nikolaev, Alexey, and Yushkov, Yury. Sputtering of pure boron using a magnetron without a radio-frequency supply. United States: N. p., 2017. Web. doi:10.1063/1.4980149.
Oks, Efim, Anders, André, Nikolaev, Alexey, & Yushkov, Yury. Sputtering of pure boron using a magnetron without a radio-frequency supply. United States. doi:10.1063/1.4980149.
Oks, Efim, Anders, André, Nikolaev, Alexey, and Yushkov, Yury. Sat . "Sputtering of pure boron using a magnetron without a radio-frequency supply". United States. doi:10.1063/1.4980149.
@article{osti_1361821,
title = {Sputtering of pure boron using a magnetron without a radio-frequency supply},
author = {Oks, Efim and Anders, André and Nikolaev, Alexey and Yushkov, Yury},
abstractNote = {},
doi = {10.1063/1.4980149},
journal = {Review of Scientific Instruments},
number = 4,
volume = 88,
place = {United States},
year = {Sat Apr 01 00:00:00 EDT 2017},
month = {Sat Apr 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4980149

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  • Pure and mixed targets of Li[sub 4]SiO[sub 4], Li[sub 3]PO[sub 4], and Li[sub 2]O were sputtered in both argon and argon/oxygen process gases using a 1-in. diam radio-frequency planar magnetron source. The appearance of the sputter target, the self-bias voltage of the target, the film deposition rate, and the optical emission of the plasma were monitored during film growth. The films were analyzed by energy dispersive x-ray spectrometry, proton induced gamma emission, and atomic spectrometry. Films grown from targets of Li[sub 3]PO[sub 4] were found to be near stoichiometric. In contrast, films grown from targets of, or containing, Li[sub 4]SiO[submore » 4] were lithium deficient due to the decomposition and segregation of Li[sub 2]O away from the sputtered area on the surface of the target. A similar redistribution of material was observed for Li[sub 2]O targets as well. Reproducible and homogeneous film compositions with stoichiometric lithium concentrations can best be achieved by codeposition with independently controlled sputter sources onto a rotating substrate.« less
  • The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thicknessmore » also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.« less
  • A planar magnetron sputtering device with thermally isolated sintered boron target has been designed and demonstrated. The magnetron is intended to use for generation of boron ion beams, as well as in plasma immersion implantation. For a boron target, high target temperature is required because boron has low electrical conductivity at room temperature, which increases with temperature. The target is well insulated thermally and can be heated by an initial low-current, high-voltage DC discharge mode. A discharge power of 16 W was adequate to reach the required surface temperature, after that a transition of the discharge to a high-current, low-voltagemore » mode is observed. Applying high current pulses over the DC heating discharge results in a self-sputtering operational mode of the magnetron discharge. Ion beam was extracted from the discharge plasma. Beam analysis was performed with a time-of-flight system. All the boron ions are single charged. The maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF{sub 3}, and could be useful for semiconductor industry application.« less
  • GaN films have been deposited on Si(111) substrates by reactive rf-magnetron sputtering at nitrogen pressures from 0.08 to 2.70 Pa without intentionally heating the substrates. X-ray diffraction (XRD), spectroscopic ellipsometry (SE), and ex situ atomic-force microscopy (AFM) observations have been carried out. The XRD patterns indicate that the GaN films deposited at pressures lower than 1.10 Pa are polycrystalline films highly oriented with the (0001) plane preferred, while those deposited at {ge}1.10 Pa display mixed orientations or amorphous form. The pseudodielectric function {epsilon}(E)={epsilon}{sub 1}(E)+i{epsilon}{sub 2}(E) of the sputter-deposited GaN films has been measured by SE in the range between 1.50more » and 5.00 eV at room temperature. The measured {epsilon}(E) spectra are analyzed by taking into account the effects of surface roughness based on an effective medium model. The roughness thickness for the film deposited at 0.27 Pa is determined to be {similar_to}17 Aa, which is comparable to the AFM rms value ({similar_to}11 Aa). {copyright} 2001 American Institute of Physics.« less
  • Tin dioxide thin films doped with fluorine were prepared by using a radio-frequency (RF) magnetron sputtering method. The target was SnO{sub 2} powder mixed with either SnF{sub 2} or SnF{sub 4} powder. The deposition conditions for obtaining films of low resistivity and their physical characteristics were systematically studied. The crystallinity, which was inferior to that of the CVD prepared film, was not improved by increasing substrate temperature, decreasing total pressure, and decreasing RF power. These changes in deposition conditions decreased the fluorine content of the film and consequently decreased carrier concentration.