On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

Mi, Hongyi; Yuan, Hao-Chih; Seo, Jung-Hun; Auciello, Orlando H.; Mancini, Derrick C.; Carpick, Robert W.; Pacheco, Sergio P.; Sumant, Anirudha V.; Ma, Zhenqiang

doi:10.1063/1.4979480

Title: On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

Journal Article · Mon Mar 27 00:00:00 EDT 2017 · AIP Advances

DOI:https://doi.org/10.1063/1.4979480· OSTI ID:1361805

Mi, Hongyi ^[1]; Yuan, Hao-Chih ^[1];

^[1]; Auciello, Orlando H. ^[2];

^[3]; Carpick, Robert W. ^[4]; Pacheco, Sergio P. ^[5]; Sumant, Anirudha V. ^[3]; Ma, Zhenqiang ^[1]

Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA, Now with Department of Materials Science and Engineering, University of Texas-Dallas, Richardson, Texas 75080, USA
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
Department Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Packaging Solutions Development, Freescale Semiconductor, Inc., 1300 N Alma School Rd, Chandler, Arizona 85224, USA

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V_th, transconductance g_m, cut-off frequency f_T and maximum oscillation frequency f_max. Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: U.S. Department of Defense (DOD), Defense Advanced Research Projects Agency (DARPA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1361805

Alternate ID(s):: OSTI ID: 1360136; OSTI ID: 1421014

Journal Information:: AIP Advances, Journal Name: AIP Advances Vol. 7 Journal Issue: 3; ISSN 2158-3226

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (14)

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p-Diamond as candidate for plasmonic terahertz and far infrared applications Shur, Michael; Rudin, Sergey; Rupper, Greg Applied Physics Letters, Vol. 113, Issue 25 https://doi.org/10.1063/1.5053091	journal	December 2018

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