skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Abstract

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Inventors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1082853
Patent Number(s):
8,354,290
Application Number:
13/080,255
Assignee:
UChicago Argonne, LLC (Argonne, IL)
DOE Contract Number:  
ACO2-06CH11357
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States: N. p., 2013. Web.
Sumant, Anirudha V., Auciello, Orlando H., & Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States.
Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Tue . "Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches". United States. https://www.osti.gov/servlets/purl/1082853.
@article{osti_1082853,
title = {Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches},
author = {Sumant, Anirudha V. and Auciello, Orlando H. and Mancini, Derrick C.},
abstractNote = {An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {1}
}

Patent:

Save / Share: