Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches
Patent
·
OSTI ID:1082853
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- Patent Number(s):
- 8,354,290
- Application Number:
- 13/080,255
- OSTI ID:
- 1082853
- Country of Publication:
- United States
- Language:
- English
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