Size-effect in layered ferrielectric CuInP2S6

Chyasnavichyus, Marius; Susner, Michael A.; Ievlev, Anton V.; Eliseev, Eugene A.; Kalinin, Sergei V.; Balke, Nina; Morozovska, Anna N.; McGuire, Michael A.; Maksymovych, Petro

doi:10.1063/1.4965837

Size-effect in layered ferrielectric CuInP₂S₆

Journal Article · Mon Oct 24 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4965837· OSTI ID:1361286

Chyasnavichyus, Marius ^[1]; Susner, Michael A. ^[2]; Ievlev, Anton V. ^[1]; Eliseev, Eugene A. ^[3]; Kalinin, Sergei V. ^[1]; Balke, Nina ^[1]; Morozovska, Anna N. ^[4]; McGuire, Michael A. ^[2]; Maksymovych, Petro ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). The Center for Nanophase Materials Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. for Problems of Materials Science
National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine). Inst. of Physics

In this paper, we report on polarization switching properties of thin flakes of van der Waals ferrielectric CuInP₂S₆. We observe mesoscale polarization domains, ferroelectric switching, and the Curie temperature above 299 K down to a thickness of ~50 nm. However, the electromechanical response is progressively suppressed below 50 nm, and vanishes at room temperature at a thickness of ~10 nm. Though larger than a single layer, 10 nm is still a very small value compared to the expectations for an intrinsic ferroelectric semiconductor. We therefore propose a model for a doped surface layer that screens spontaneous polarization in this material. The charges in the screening layer may also participate in secondary chemical reactions, which may explain domain pinning observed in thermal cycling of the flakes above the Curie temperature. At the same time, ferroelectric switching is intertwined with ionic diffusion, resulting in erratic and damaging switching at room temperature. Finally, owing to much stronger temperature dependence of ionic diffusion, the two phenomena can be decoupled allowing more reliable switching to be obtained at low temperatures.

View Journal Article

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Laboratory Directed Research and Development (LDRD) Program

Contributing Organization:: National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 1361286

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 109; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (26)

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Ohtomo, A.; Hwang, H. Y. Nature, Vol. 427, Issue 6973 https://doi.org/10.1038/nature02308	journal	January 2004
Ionic conductivity in ferroic CuInP ₂ S ₆ and CuCrP ₂ S ₆ Maisonneuve, V.; Reau, J. M.; Dong, Ming Ferroelectrics, Vol. 196, Issue 1 https://doi.org/10.1080/00150199708224175	journal	May 1997
APPLIED PHYSICS: Tunneling Across a Ferroelectric Tsymbal, E. Y. Science, Vol. 313, Issue 5784 https://doi.org/10.1126/science.1126230	journal	July 2006
Ultrasensitive and Broadband MoS ₂ Photodetector Driven by Ferroelectrics Wang, Xudong; Wang, Peng; Wang, Jianlu Advanced Materials, Vol. 27, Issue 42 https://doi.org/10.1002/adma.201503340	journal	September 2015
Observation of piezoelectricity in free-standing monolayer MoS2 Zhu, Hanyu; Wang, Yuan; Xiao, Jun Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.309	journal	December 2014
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics Wu, Wenzhuo; Wang, Lei; Li, Yilei Nature, Vol. 514, Issue 7523 https://doi.org/10.1038/nature13792	journal	October 2014
Critical thickness for ferroelectricity in perovskite ultrathin films Junquera, Javier; Ghosez, Philippe Nature, Vol. 422, Issue 6931, p. 506-509 https://doi.org/10.1038/nature01501	journal	April 2003
Anisotropy effects in thick layered CuInP ₂ S ₆ and CuInP ₂ Se ₆ crystals Dziaugys, Andrius; Banys, Juras; Macutkevic, Jan Phase Transitions, Vol. 86, Issue 9 https://doi.org/10.1080/01411594.2012.745533	journal	September 2013
Ultrathin limit and dead-layer effects in local polarization switching of BiFeO 3 Maksymovych, Peter; Huijben, Mark; Pan, Minghu Physical Review B, Vol. 85, Issue 1 https://doi.org/10.1103/PhysRevB.85.014119	journal	January 2012
Disordering effect on optical absorption processes in CuInP2S6 layered ferrielectrics Studenyak, I. P.; Mitrovcij, V. V.; Kovacs, Gy. S. physica status solidi (b), Vol. 236, Issue 3 https://doi.org/10.1002/pssb.200301513	journal	April 2003
Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy Balke, Nina; Maksymovych, Petro; Jesse, Stephen ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b02227	journal	May 2015
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
CuInP ₂ S ₆ Room Temperature Layered Ferroelectric Belianinov, A.; He, Q.; Dziaugys, A. Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b00491	journal	May 2015
Equilibrium and stability of polarization in ultrathin ferroelectric films with ionic surface compensation Stephenson, G. Brian; Highland, Matthew J. Physical Review B, Vol. 84, Issue 6 https://doi.org/10.1103/PhysRevB.84.064107	journal	August 2011
Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a 1 T Monolayer of MoS 2 Shirodkar, Sharmila N.; Waghmare, Umesh V. Physical Review Letters, Vol. 112, Issue 15 https://doi.org/10.1103/PhysRevLett.112.157601	journal	April 2014
Resonance enhancement in piezoresponse force microscopy: Mapping electromechanical activity, contact stiffness, and Q factor Jesse, Stephen; Mirman, Boris; Kalinin, Sergei V. Applied Physics Letters, Vol. 89, Issue 2 https://doi.org/10.1063/1.2221496	journal	July 2006
Stabilization of Monodomain Polarization in Ultrathin PbTiO 3 Films Fong, D. D.; Kolpak, A. M.; Eastman, J. A. Physical Review Letters, Vol. 96, Issue 12, Article No. 127601 https://doi.org/10.1103/PhysRevLett.96.127601	journal	March 2006
High- T _c Layered Ferrielectric Crystals by Coherent Spinodal Decomposition Susner, Michael A.; Belianinov, Alex; Borisevich, Albina ACS Nano, Vol. 9, Issue 12 https://doi.org/10.1021/acsnano.5b05682	journal	October 2015
Intrinsic Nucleation Mechanism and Disorder Effects in Polarization Switching on Ferroelectric Surfaces Maksymovych, Peter; Jesse, Stephen; Huijben, Mark Physical Review Letters, Vol. 102, Issue 1 https://doi.org/10.1103/PhysRevLett.102.017601	journal	January 2009
Ferroelectric tunnel junctions with graphene electrodes Lu, H.; Lipatov, A.; Ryu, S. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6518	journal	November 2014
Surface Conduction on Insulating BaTiO 3 Crystal Suggesting an Intrinsic Surface Electron Layer Watanabe, Yukio; Okano, Motochika; Masuda, Akihiro Physical Review Letters, Vol. 86, Issue 2 https://doi.org/10.1103/PhysRevLett.86.332	journal	January 2001
Dielectric and ultrasonic investigation of phase transition in cuinp ₂ s ₆ crystals Banys, J.; Macutkevic, J.; Samulionis, V. Phase Transitions, Vol. 77, Issue 4 https://doi.org/10.1080/01411590410001667608	journal	April 2004
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes Liu, Fucai; You, Lu; Seyler, Kyle L. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12357	journal	August 2016
Polarization Control of Electron Tunneling into Ferroelectric Surfaces Maksymovych, P.; Jesse, S.; Yu, P. Science, Vol. 324, Issue 5933 https://doi.org/10.1126/science.1171200	journal	June 2009
Structural and electronic properties of transition metal thiophosphates Evain, M.; Brec, R.; Whangbo, M. -H. Journal of Solid State Chemistry, Vol. 71, Issue 1 https://doi.org/10.1016/0022-4596(87)90165-4	journal	November 1987
Ferrielectric ordering in lamellar CuInP 2 S 6 Maisonneuve, V.; Cajipe, V. B.; Simon, A. Physical Review B, Vol. 56, Issue 17 https://doi.org/10.1103/PhysRevB.56.10860	journal	November 1997

Similar Records

CuInP₂S₆ Room Temperature Layered Ferroelectric

Journal Article · Fri May 01 00:00:00 EDT 2015 · Nano Letters · OSTI ID:1265589

Stress and Curvature Effects in Layered 2D Ferroelectric CuInP₂S₆

Journal Article · Thu Nov 02 00:00:00 EDT 2023 · ACS Nano · OSTI ID:2229373

Related Subjects

36 MATERIALS SCIENCE
Atomic force microscopy
Ferroelectric materials
Ferroelectric phase transitions
Ferroelectric switching
Polarization

Size-effect in layered ferrielectric CuInP2S6

Citation Formats

References (26)

Similar Records

Related Subjects

Size-effect in layered ferrielectric CuInP₂S₆