Stress and Curvature Effects in Layered 2D Ferroelectric CuInP2S6

Liu, Yongtao; Morozovska, Anna N.; Ghosh, Ayana; Kelley, Kyle P.; Eliseev, Eugene A.; Yao, Jinyuan; Liu, Ying; Kalinin, Sergei

doi:10.1021/acsnano.3c08603

Stress and Curvature Effects in Layered 2D Ferroelectric CuInP₂S₆

Journal Article · Thu Nov 02 00:00:00 EDT 2023 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.3c08603· OSTI ID:2229373

^[1]; ^[2]; ^[3]; ^[3]; Eliseev, Eugene A. ^[4]; ^[5]; Liu, Ying ^[5]; Kalinin, Sergei ^[6]

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Penn State
National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
National Academy of Sciences of Ukraine, Kyiv (Ukraine)
Pennsylvania State Univ., University Park, PA (United States)
University of Tennessee, Knoxville, TN (United States)

Nanoscale ferroelectric 2D materials offer the opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP₂S₆ (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce the finite element Landau–Ginzburg–Devonshire model, revealing strong changes in hysteresis characteristics in regions subjected to tensile and compressive strain. The piezoresponse force microscopy (PFM) results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and nonbending regions. Furthermore, these studies offer insights into the fabrication of curvature-engineered nanoelectronic devices.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0021118

OSTI ID:: 2229373

Alternate ID(s):: OSTI ID: 2326314

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 21 Vol. 17; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
CuInP2S6
curvature
electric fields
ferroelectric
flexoelectric
layers
phase transition
piezoresponse force microscopy
polarization
strain
stress

Stress and Curvature Effects in Layered 2D Ferroelectric CuInP2S6

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Stress and Curvature Effects in Layered 2D Ferroelectric CuInP₂S₆