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Integrated Avalanche Photodiode arrays

Patent ·
OSTI ID:1351819
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
Research Organization:
LightSpin Technologies, Inc. Endicott, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0009538
Assignee:
LightSpin Technologies, Inc.
Patent Number(s):
9,627,569
Application Number:
14/718,352
OSTI ID:
1351819
Country of Publication:
United States
Language:
English

References (22)

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Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions journal January 1997
Electrical isolation in GaAs by light ion irradiation: The role of antisite defects journal January 1996
Ultrafast trapping times in ion implanted InP journal September 2002
Implant isolation in GaAs device technology: Effect of substrate temperature journal April 2002
A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction journal January 1992
Electrical isolation of InGaP by proton and helium ion irradiation journal October 2002
Guard-Ring Structures for Silicon Photomultipliers journal January 2010
Simulation of Silicon Photomultiplier Signals journal December 2009
Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature journal June 2003
Electrical isolation of n-type GaAs devices by MeV/MeV-like implantation of various ion species conference January 2002
Planar InAs photodiodes fabricated using He ion implantation journal January 2012
Electronics for single photon avalanche diode arrays journal October 2007
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation journal August 2006
Ion implantation doping and isolation of In0.5Ga0.5P journal September 1991
Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors journal May 2012
Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode journal April 1986
The digital silicon photomultiplier — System architecture and performance evaluation conference October 2010
Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K journal January 2013
Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures journal April 2002

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