Integrated Avalanche Photodiode arrays

Harmon, Eric S.

Title: Integrated Avalanche Photodiode arrays

Patent · Tue Apr 18 00:00:00 EDT 2017

OSTI ID:1351819

Harmon, Eric S.

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

View Patent

Cite

Export

Save

Research Organization:: LightSpin Technologies, Inc. Endicott, NY (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0009538

Assignee:: LightSpin Technologies, Inc.

Patent Number(s):: 9,627,569

Application Number:: 14/718,352

OSTI ID:: 1351819

Resource Relation:: Patent File Date: 2015 May 21

Country of Publication:: United States

Language:: English

References (38)

Photo detector input circuit Temes, Gabor C.; Cheung, Derek T. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4173723 US Patent Document 4,173,723	patent	November 1979
Process for producing an injection laser and laser obtained by this process Landreau, Jean; Delpech, Philippe; Bouley, Jean-Claude https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4341570 US Patent Document 4,341,570	patent	July 1982
Method of making avalanche photodiodes Bottka, Nicholas; Hills, Marian E. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4403397 US Patent Document 4,403,397	patent	September 1983
Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment Anthony, Philip J.; Hartman, Robert L.; Koszi, Louis A. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4539743 US Patent Document 4,539,743	patent	September 1985
Avalanche photodiode array integrated with etched silicon divider Green, Samuel I. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5204520 US Patent Document 5,204,520	patent	April 1993
Planar buried quantum well photodetector Hui, Sanghee Park; Pei, Shin-Shem https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5223704 US Patent Document 5,223,704	patent	June 1993
Multi-capacitance photodiode image sensor Mihara, Akira https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5329112 US Patent Document 5,329,112	patent	July 1994
Image sensor with transparent capacitive regions Van Berkel, Cornelis; Bird, Neil C.; Davies, Oliver S. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5349174 US Patent Document 5,349,174	patent	September 1994
Mesa-structure avalanche photodiode having a buried epitaxial junction Hasnain, Ghulam; Hollenhorst, James N.; Su, Chung-Yi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5866936 US Patent Document 5,866,936	patent	February 1999
High voltage silicon carbide semiconductor device with bended edge Hermansson, Willy; Ramberg, Lennart; Sigurd, Dag https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5914499 US Patent Document 5,914,499	patent	June 1999
Photodetector with isolation implant region for reduced device capacitance and increased bandwidth Brinkmann, David; Lindemann, John Hart; Scott, Jeffrey W. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6753214 US Patent Document 6,753,214	patent	June 2004
LED fabrication via ion implant isolation Slater, Jr., David B.; Edmond, John Adam; Suvorov, Alexander https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7943406 US Patent Document 7,943,406	patent	May 2011
Systems and methods for reducing crosstalk in an avalanche photodiode detector array Yuan, Ping; McDonald, Paul A. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8279411 US Patent Document 8,279,411	patent	October 2012
Silicon photomultiplier and readout method Pavlov, Nikolai https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9029772 US Patent Document 9,029,772	patent	May 2015
Integrated avalanche photodiode arrays Harmon, Eric https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9076707 US Patent Document 9,076,707	patent	July 2015
Solid state microchannel plate photodetector Harmon, Eric S.; Salzman, David B. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040245592 US Patent Application 10/837175; 20040245592	patent-application	December 2004
A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction Liu, Y.; Forrest, S. R.; Hladky, J. Journal of Lightwave Technology, Vol. 10, Issue 2, p. 182-193 https://doi.org/10.1109/50.120573	journal	January 1992
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy Daliento, S.; Mele, L.; Spirito, P. https://doi.org/10.1109/ISPSD.2006.1666094	conference	January 2006
Ultrafast trapping times in ion implanted InP Carmody, C.; Boudinov, H.; Tan, H. H. Journal of Applied Physics, Vol. 92, Issue 5, p. 2420-2423 https://doi.org/10.1063/1.1493651	journal	September 2002
Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C. Journal of Applied Physics, Vol. 93, Issue 11, p. 9123-9129 https://doi.org/10.1063/1.1569664	journal	June 2003
Electrical isolation in GaAs by light ion irradiation: The role of antisite defects de Souza, J. P.; Danilov, I.; Boudinov, H. Applied Physics Letters, Vol. 68, Issue 4, p. 535-537 https://doi.org/10.1063/1.116391	journal	January 1996
Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions de Souza, J. P.; Danilov, I.; Boudinov, H. Journal of Applied Physics, Vol. 81, Issue 2, p. 650-655 https://doi.org/10.1063/1.364229	journal	January 1997
Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures Too, P.; Ahmed, S.; Gwilliam, R. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 188, Issue 1-4, p. 205-209 https://doi.org/10.1016/S0168-583X(01)01091-6	journal	April 2002
Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K Huang, Chiao-Ti; Li, Jiun-Yun; Sturm, James C. IEEE Electron Device Letters, Vol. 34, Issue 1, p. 21-23 https://doi.org/10.1109/LED.2012.2228160	journal	January 2013
Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors Wendler, E.; Wendler, L. Applied Physics Letters, Vol. 100, Issue 19, Article No. 192108 https://doi.org/10.1063/1.4711810	journal	May 2012
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation Mikulics, Martin; Marso, Michel; Mantl, Siegfried Applied Physics Letters, Vol. 89, Issue 9, Article No. 091103 https://doi.org/10.1063/1.2339907	journal	August 2006
Ion implantation doping and isolation of In_0.5Ga_0.5P Pearton, S. J.; Kuo, J. M.; Ren, F. Applied Physics Letters, Vol. 59, Issue 12, p. 1467-1469 https://doi.org/10.1063/1.105290	journal	September 1991
Electrical isolation of n-type GaAs devices by MeV/MeV-like implantation of various ion species Ahmed, S.; Sealy, B. J.; Gwilliam, R. https://doi.org/10.1109/EDMO.2002.1174924	conference	January 2002
Implant isolation in GaAs device technology: Effect of substrate temperature Ahmed, S.; Gwilliam, R.; Sealy, B. J. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 188, Issue 1-4, p. 196-200 https://doi.org/10.1016/S0168-583X(01)01086-2	journal	April 2002
Proton isolated In_0.2Ga_0.8As/GaAs strained‐layer superlattice avalanche photodiode Bulman, G. E.; Myers, D. R.; Zipperian, T. E. Applied Physics Letters, Vol. 48, Issue 15, p. 1015-1017 https://doi.org/10.1063/1.96621	journal	April 1986
Electrical isolation of InGaP by proton and helium ion irradiation Danilov, I.; de Souza, J. P.; Boudinov, H. Journal of Applied Physics, Vol. 92, Issue 8, p. 4261-4265 https://doi.org/10.1063/1.1506200	journal	October 2002
The digital silicon photomultiplier — System architecture and performance evaluation Frach, Thomas; Prescher, Gordian; Degenhardt, Carsten https://doi.org/10.1109/NSSMIC.2010.5874069	conference	October 2010
Ion implantation for isolation of III-V semiconductors Pearton, S. J. Materials Science Reports, Vol. 4, Issue 6, p. 313-363 https://doi.org/10.1016/S0920-2307(05)80001-5	journal	January 1990
Planar InAs photodiodes fabricated using He ion implantation Sandall, Ian; Tan, Chee Hing; Smith, Andrew Optics Express, Vol. 20, Issue 8, p. 8575-8583 https://doi.org/10.1364/OE.20.008575	journal	January 2012
Simulation of Silicon Photomultiplier Signals Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3726-3733 https://doi.org/10.1109/TNS.2009.2030728	journal	December 2009
Guard-Ring Structures for Silicon Photomultipliers Sul, Woo-Suk; Oh, Jung-Hun; Lee, Chae-Hun IEEE Electron Device Letters, Vol. 31, Issue 1, p. 41-43 https://doi.org/10.1109/LED.2009.2035829	journal	January 2010
Electronics for single photon avalanche diode arrays Tisa, S.; Zappa, F.; Tosi, A. Sensors and Actuators A: Physical, Vol. 140, Issue 1, p. 113-122 https://doi.org/10.1016/j.sna.2007.06.022	journal	October 2007
Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes Zhou, Qiugui; Liu, Han-Din; McIntosh, Dion C. IEEE Photonics Technology Letters, Vol. 21, Issue 23, p. 1734-1736 https://doi.org/10.1109/LPT.2009.2032524	journal	December 2009

Similar Records

Integrated avalanche photodiode arrays

Patent · Tue Jul 07 00:00:00 EDT 2015 · OSTI ID:1351819

Harmon, Eric S.

Fast, high density avalanche photodiode array

Conference · Mon Aug 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:1351819

Gramsch, E; Szawlowski, M; Zhang, S; +1 more

High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Journal Article · Fri Sep 02 00:00:00 EDT 2022 · Physical Review Letters · OSTI ID:1351819

Reens, David; Collins, Michael; Ciampi, Joseph; +12 more

Related Subjects

47 OTHER INSTRUMENTATION
36 MATERIALS SCIENCE

Title: Integrated Avalanche Photodiode arrays

Citation Formats

References (38)

Similar Records

Related Subjects