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Title: Magnetic multilayer structure

Patent ·
OSTI ID:1347542

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0002892
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Patent Number(s):
9,601,484
Application Number:
15/156,576
OSTI ID:
1347542
Resource Relation:
Patent File Date: 2016 May 17
Country of Publication:
United States
Language:
English

References (5)

Method of forming an inductor patent June 2008
Laminating magnetic materials in a semiconductor device patent July 2010
Laminated magnetic thin films for magnetic recording with weak ferromagnetic coupling patent September 2012
Low-Cost Non-Volatile Flash-Ram Memory patent-application February 2009
On Chip Integrated Inductor patent-application October 2012

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