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Title: Magnetic multilayer structure

Patent ·
OSTI ID:1532074

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0002892
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
9,929,209
Application Number:
15/414,997
OSTI ID:
1532074
Resource Relation:
Patent File Date: 2017-01-25
Country of Publication:
United States
Language:
English

References (8)

Magnetic element with reduced shield-to-shield spacing patent April 2016
Laminated magnetic thin films for magnetic recording with weak ferromagnetic coupling patent September 2012
Laminating magnetic materials in a semiconductor device patent July 2010
Method of forming an inductor patent June 2008
On Chip Integrated Inductor patent-application October 2012
Module having a stacked magnetic device and semiconductor device and method of forming the same patent December 2012
Plated lamination structures for integrated magnetic devices patent June 2014
Low-Cost Non-Volatile Flash-Ram Memory patent-application February 2009

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