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Title: Magnetic multilayer structure

Abstract

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347542
Patent Number(s):
9,601,484
Application Number:
15/156,576
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
DOE Contract Number:  
EE0002892
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 May 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Magnetic multilayer structure. United States: N. p., 2017. Web.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, & Webb, Bucknell C. Magnetic multilayer structure. United States.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. 2017. "Magnetic multilayer structure". United States. https://www.osti.gov/servlets/purl/1347542.
@article{osti_1347542,
title = {Magnetic multilayer structure},
author = {Herget, Philipp and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang and Webb, Bucknell C.},
abstractNote = {A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.},
doi = {},
url = {https://www.osti.gov/biblio/1347542}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 21 00:00:00 EDT 2017},
month = {Tue Mar 21 00:00:00 EDT 2017}
}

Works referenced in this record:

Method of forming an inductor
patent, June 2008


Laminating magnetic materials in a semiconductor device
patent, July 2010


Low-Cost Non-Volatile Flash-Ram Memory
patent-application, February 2009


On Chip Integrated Inductor
patent-application, October 2012