Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction
- Michigan State Univ., East Lansing, MI (United States); Michigan State University
- Michigan State Univ., East Lansing, MI (United States)
Here, we report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.
- Research Organization:
- Michigan State Univ., East Lansing, MI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0010472
- OSTI ID:
- 1346028
- Journal Information:
- Scientific Reports, Journal Name: Scientific Reports Vol. 7; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Unlocking the Single-Domain Epitaxy of Halide Perovskites
|
journal | September 2017 |
Novel Unexpected Reconstructions of (100) and (111) Surfaces of NaCl: Theoretical Prediction
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journal | October 2019 |
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