Homoepitaxial growth of 9,10-diphenylanthracene

Chen, Pei; Lunt, Richard R.

doi:10.1016/j.jcrysgro.2020.125771

Homoepitaxial growth of 9,10-diphenylanthracene

Journal Article · Wed Jun 17 00:00:00 EDT 2020 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2020.125771· OSTI ID:1802115

Chen, Pei ^[1]; Lunt, Richard R. ^[2]

Michigan State Univ., East Lansing, MI (United States); Michigan State Univ., East Lansing, MI (United States)
Michigan State Univ., East Lansing, MI (United States)

Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.

View Accepted Manuscript (DOE)

Research Organization:: Michigan State Univ., East Lansing, MI (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0010472

OSTI ID:: 1802115

Alternate ID(s):: OSTI ID: 1635142

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 546; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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