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Sputtered Nb- and Ta-doped TiO2 transparent conducting oxide films on glass

Journal Article · · Journal of Materials Research
Radio frequency (rf) magnetron sputtering is used to deposit Ti0.85Nb0.15O2 and Ti0.8Ta0.2O2 films on glass substrates at substrate temperatures (TS) ranging from ~250 to 400 °C. The most conducting Nb-doped TiO2 films were deposited at TS = 370 °C, with conductivities of ~60 S/cm, carrier concentrations of 1.5 × 1021 cm-3 and mobilities <1 cm2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO3. The anatase phase could not be stabilized in the Ta-doped TiO2 films, likely because of the high dopant concentration.
Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1344976
Report Number(s):
NREL/JA--560-42505
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 10 Vol. 22; ISSN 0884-2914; ISSN applab
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English

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