Displacement Damage Evolution in GaAs Following Electron, Proton and Silicon Ion Irradiation
Journal Article
·
· IEEE Transactions on Nuclear Science
We characterize radiation induced defects in n-type GaAs following electron, proton, and silicon ion irradiations using deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC) measurements. EBIC micrographs show the existence of radiation induced recombination centers following high energy proton (E MeV) or 22 MeV silicon ion irradiations, which were not observed following 1 MeV electron or 2 MeV proton irradiations. The evolution of the U-band defect as determined by DLTS seems to occur when active recombination centers are observed in the EBIC images and therefore, appears to be produced by high energy recoils probably creating defect clusters.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1344745
- Report Number(s):
- NREL/JA--520-42848
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 54; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)
- Country of Publication:
- United States
- Language:
- English
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