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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Journal Article · · IEEE Transactions on Nuclear Science

Electrical and structural changes in GaAs are monitored using electron beam induced current (EBIC) and transmission electron microscopy (TEM) measurements after irradiation by protons and silicon ions. It has been determined that higher energy protons (E ges 10 MeV) and silicon ions disordered regions that are electrically and structurally different than those produced by lower energy protons. The data suggest that these disordered regions are responsible for causing the deviations between experimental data and NIEL. From analyses of the recoil spectra, high energy recoils appear to be responsible for the formation of these disordered regions.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO.
Sponsoring Organization:
USDOE Office of Solar Energy Technologies Program
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1023065
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6, December 2008 Vol. 55; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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