Electronic structures of , and CuO: A joint experimental and theoretical study
Journal Article
·
· Physical Review B
- Univ. of Lorraine, Nancy (France). Inst. of Jean Lamour
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Xiangtan Univ. (China). Dept. of Physics
- Saarland Univ., Saarbrucken (Germany). Dept. of Materials Science
We present a joint experimental and theoretical study for the electronic structures of copper oxides including Cu2O, CuO, and the metastable mixed-valence oxide Cu4O3. The optical band gap is determined by experimental optical absorption coefficient, and the electronic structure in valence and conduction bands is probed by photoemission and electron energy loss spectroscopies, respectively. Furthermore, we compare our experimental results with many-body GW calculations utilizing an additional on-site potential for d-orbital energies that facilitates tractable and predictive computations. The side-by-side comparison between the three oxides, including a band insulator (Cu2O) and two Mott/charge-transfer insulators (CuO, Cu4O3) leads to a consistent picture for the optical and band-structure properties of the Cu oxides, strongly supporting indirect band gaps of about 1.2 and 0.8 eV in CuO and Cu4O3, respectively. This comparison also points towards surface oxidation and reduction effects that can complicate the interpretation of the photoemission spectra.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1340646
- Alternate ID(s):
- OSTI ID: 1335728
OSTI ID: 1388580
- Report Number(s):
- NREL/JA--5K00-66348
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 24 Vol. 94; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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