Upsets in Erased Floating Gate Cells With High-Energy Protons
Journal Article
·
· IEEE Transactions on Nuclear Science
We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively explain the experimental observations in terms of simple charge loss, at least in SLC devices. The possibility that memories exposed to high energy protons and heavy ions exhibit negative charge transfer between programmed and erased cells is investigated, although the analysis does not provide conclusive support to this hypothesis.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1339278
- Report Number(s):
- SAND--2017-0103J; 650209
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 64; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory
Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate
Radiation response of floating gate EEPROM memory cells
Journal Article
·
Sun Jan 05 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22257020
Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate
Journal Article
·
Mon Jul 04 00:00:00 EDT 2016
· Applied Physics Letters
·
OSTI ID:22590635
Radiation response of floating gate EEPROM memory cells
Conference
·
Thu Nov 30 23:00:00 EST 1989
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:6997852