Radiation response of floating gate EEPROM memory cells

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.45415· OSTI ID:6997852

Snyder, E S; McWhater, P J; Dellin, T A ^[1]; Sweetman, J D ^[2]

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1. Sandia National Lab., Albuquerque, NM (US)
2. Seeq Technology, Inc., San Jose, CA (US)

The effect of radiation on a floating gate EEPROM nonvolatile memory cell is determined experimentally and modeled analytically. The new model predicts the threshold voltage change resulting from radiation. A screen based on the initial 1 state (excess electron) threshold voltage is shown to be necessary to assure data retention during irradiation. Techniques to increase radiation hardness are also described. The hardness of floating gate cells is shown to be limited to less than 100 krad(Si) for a fixed reference sense amplifier. The use of a differential sense amplifier may increase this limit. Therefore, floating gate memories should be useful for those applications requiring low total-doses.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6997852
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
DATA
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
HARDENING
INFORMATION
IRRADIATION
MATHEMATICAL MODELS
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
PULSE AMPLIFIERS
RADIATION EFFECTS
RADIATION HARDENING