Single poly cell as the best choice for radiation-hard floating gate EEPROM technology

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6908073

Wellekens, D; Groeseneken, G; Van Houdt, J; Maes, H E ^[1]

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1. IMEC, Leuven (Belgium)

The total dose radiation response of two classes of floating gate nonvolatile memory devices is examined. While the hardness of commonly studied double polysilicon cells is restricted to a few kilorads, devices having only one polysilicon layer are shown to be much more radiation-hard. This is mainly due to the thinner oxide that can be used in the coupling capacitor of such cells. It is also shown that the contribution of the field oxide regions, present under the floating gate of the cells, is of major importance for their radiation response. Finally, the programming behavior of the devices is shown to remain fairly unaffected by the ionizing radiation.

• OSTI ID: 6908073
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRICAL PROPERTIES
EQUIPMENT
HARDENING
MEMORY DEVICES
MILITARY EQUIPMENT
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SPACE FLIGHT
USES