Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors.

Conference · Thu Oct 01 04:00:00 EDT 2015

DOI:https://doi.org/10.1149/06905.0183ecst· OSTI ID:1334585

Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

Abstract not provided.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Cited By (3)

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul arXiv https://doi.org/10.48550/arxiv.1602.01204	text	January 2016
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul Advanced Materials, Vol. 28, Issue 14 https://doi.org/10.1002/adma.201505435	journal	February 2016
Analytic band-to-trap tunneling model including band offset for heterojunction devices Gao, Xujiao; Kerr, Bert; Huang, Andy Journal of Applied Physics, Vol. 125, Issue 5 https://doi.org/10.1063/1.5078685	journal	February 2019

Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Oxide Memristors.

Conference · Sat Jan 31 23:00:00 EST 2015 · OSTI ID:1240110

Journal Article · Mon Sep 07 20:00:00 EDT 2015 · ECS Transactions (Online) · OSTI ID:1237669

Stages of Switching in Tantalum Oxide Memristor.

Conference · Mon Dec 31 23:00:00 EST 2012 · OSTI ID:1116130