Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Journal Article · Tue Nov 01 00:00:00 EDT 2016 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2016.2600342· OSTI ID:1330947

Kuciauskas, Darius ^[1]; Wernsing, Keith ^[2]; Jensen, Soren Alkaersig ^[1]; Barnes, Teresa M. ^[1]; Myers, Thomas H. ^[3]; Bartels, Randy A. ^[2]

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1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
2. Colorado State Univ., Fort Collins, CO (United States)
3. Texas State Univ., San Marcos, TX (United States)

Here, we used time-resolved photoluminescence microscopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm²/(V s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1330947
• Report Number(s): NREL/JA--5900-66373
• Journal Information: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 6 Vol. 6; ISSN 2156-3381
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
PV device
cadmium telluride
photoluminescence
recombination