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Title: Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Abstract

Heterostructures with CdTe and CdTe 1-xSe x (x ~ 0.01) absorbers between two wider-band-gap Cd 1-xMg xTe barriers (x ~ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. Here, the dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

Authors:
 [1]; ORCiD logo [2];  [3];  [2];  [3]; ORCiD logo [3]; ORCiD logo [3];  [3]; ORCiD logo [3];  [3];  [2]; ORCiD logo [3]
  1. Colorado State Univ., Fort Collins, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Texas State Univ., San Marcos, TX (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1326171
Alternate Identifier(s):
OSTI ID: 1312053
Report Number(s):
NREL/JA-5K00-67149
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence; epitaxy; II-VI semiconductors; diffusion; III-V semiconductors; emission spectroscopy; semiconductors; lasers; electronic devices; charge recombination; time-resolved photoluminescence; atomic force microscopy; heterostructures; phonons

Citation Formats

Zaunbrecher, Katherine N., Kuciauskas, Darius, Swartz, Craig H., Dippo, Pat, Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., Barnes, Teresa M., and Myers, Thomas H. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4961989.
Zaunbrecher, Katherine N., Kuciauskas, Darius, Swartz, Craig H., Dippo, Pat, Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., Barnes, Teresa M., & Myers, Thomas H. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy. United States. doi:10.1063/1.4961989.
Zaunbrecher, Katherine N., Kuciauskas, Darius, Swartz, Craig H., Dippo, Pat, Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., Barnes, Teresa M., and Myers, Thomas H. Mon . "Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy". United States. doi:10.1063/1.4961989. https://www.osti.gov/servlets/purl/1326171.
@article{osti_1326171,
title = {Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy},
author = {Zaunbrecher, Katherine N. and Kuciauskas, Darius and Swartz, Craig H. and Dippo, Pat and Edirisooriya, Madhavie and Ogedengbe, Olanrewaju S. and Sohal, Sandeep and Hancock, Bobby L. and LeBlanc, Elizabeth G. and Jayathilaka, Pathiraja A. R. D. and Barnes, Teresa M. and Myers, Thomas H.},
abstractNote = {Heterostructures with CdTe and CdTe1-xSex (x ~ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ~ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. Here, the dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.},
doi = {10.1063/1.4961989},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 109,
place = {United States},
year = {2016},
month = {8}
}

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    Works referencing / citing this record:

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