Oblique patterned etching of vertical silicon sidewalls

Burckel, D. Bruce; Finnegan, Patrick S.; Henry, M. David; Resnick, Paul J.; Jarecki, Jr., Robert L.

doi:10.1063/1.4945681

Oblique patterned etching of vertical silicon sidewalls

Journal Article · Tue Apr 05 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945681· OSTI ID:1326637

Burckel, D. Bruce ^[1]; Finnegan, Patrick S. ^[1]; Henry, M. David ^[1]; Resnick, Paul J. ^[1]; Jarecki, Jr., Robert L. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A method for patterning on vertical silicon surfaces in high aspect ratio silicontopography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1326637

Alternate ID(s):: OSTI ID: 1420599

Report Number(s):: SAND--2016-9244J; 647514

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 108; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Ripple formation on Si surfaces during plasma etching in Cl ₂ Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma AIP Advances, Vol. 8, Issue 5 https://doi.org/10.1063/1.5017070	journal	May 2018
Oblique angled plasma etching for 3D silicon structures with wiggling geometries Chang, Bingdong Nanotechnology, Vol. 31, Issue 8 https://doi.org/10.1088/1361-6528/ab53fb	journal	November 2019

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