Oblique patterned etching of vertical silicon sidewalls
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1326637
- Alternate ID(s):
- OSTI ID: 1420599
- Report Number(s):
- SAND-2016-9244J; APPLAB; 647514
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 14; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 6 works
Citation information provided by
Web of Science
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