Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05--1.5-keV photon-energy range
- Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)
- Department of Nuclear Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
The measured photocurrents from two different {ital p}-{ital n}-junction silicon photodiodes at 170-A (73-eV) and at 8.34-A (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70--100 {Omega} cm), and the other is fabricated on high-resistivity silicon ({lt}2 {times} 10{sup 4} {Omega} cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 {plus_minus} 4 at 8.34 A and 12.5 {plus_minus} 2 at 170 A.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-86ER53214
- OSTI ID:
- 130693
- Journal Information:
- Applied Optics, Journal Name: Applied Optics Journal Issue: 22 Vol. 34; ISSN APOPAI; ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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