Silicon photodiode characterization from 1 eV to 10 keV
Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors have assembled individually filtered photodiodes into an array designated the XUV-7. The XUV-7 provides seven photodiodes in a vacuum leak tight, electrically isolated, low noise, high bandwidth, x-ray filtered assembly in a compact package with a 3.7 cm outside diameter. In addition they have assembled the diodes in other custom configurations as detectors for spectrometers. Their calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds. Silicon photodiodes have proven to be a versatile and useful complement to the standard photocathode detectors for soft x-ray measurement and are very competitive with diamond for a number of applications.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 538029
- Report Number(s):
- LA-UR--97-2284; CONF-970706--; ON: DE98000248
- Country of Publication:
- United States
- Language:
- English
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