Nanoscale patterning and selective chemistry of silicon surfaces by UHV-STM
- Univ. of Illinois, Urbana, IL (United States)
Nanometer scale patterning of the Si(100)-2xl:H monohydride surface has been achieved using a UHV-STM. At biases of 5-6 V (tip negative) field emitted electrons promote Si-H bonding to antibonding transitions, thereby desorbing hydrogen. At lower biases and high currents depassivation occurs in a manner consistent with vibrational heating of the Si-H bond as proposed by Avouris et al. In this case individual atomic dimer rows can be depassivated since the STM is operating in the tunneling regime. The STK-patterned areas revert back to clean Si, suggesting numerous possibilities for nanoscale selective chemistry. Results including selective area oxidation and nitridation will be presented to demonstrate this aspect of the patterning.
- OSTI ID:
- 126844
- Report Number(s):
- CONF-950402--
- Country of Publication:
- United States
- Language:
- English
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