Selective area growth of metal nanostructures

Journal Article · Sun Mar 31 23:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115861· OSTI ID:279975

Adams, D P; Mayer, T M; Swartzentruber, B S ^[1]

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1. Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185 (United States)

Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO){sub 5} at 275{degree}C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths {approximately}10 nm are constructed using this selective-area, autocatalytic growth technique.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 279975
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 68; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CVD
FABRICATION
IRON
LITHOGRAPHY
METALS
MICROSTRIP LINES
MICROSTRUCTURE
NANOSTRUCTURES
STM