Selective area growth of metal nanostructures
- Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185 (United States)
Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO){sub 5} at 275{degree}C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths {approximately}10 nm are constructed using this selective-area, autocatalytic growth technique.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 279975
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 16; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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