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Title: Selective area growth of metal nanostructures

Abstract

Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO){sub 5} at 275{degree}C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths {approximately}10 nm are constructed using this selective-area, autocatalytic growth technique.

Authors:
; ;  [1]
  1. Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185 (United States)
Publication Date:
Research Org.:
Sandia National Laboratory
OSTI Identifier:
279975
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 68; Journal Issue: 16; Other Information: PBD: Apr 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; METALS; FABRICATION; IRON; CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; CVD; LITHOGRAPHY; STM; NANOSTRUCTURES; MICROSTRIP LINES

Citation Formats

Adams, D P, Mayer, T M, and Swartzentruber, B S. Selective area growth of metal nanostructures. United States: N. p., 1996. Web. doi:10.1063/1.115861.
Adams, D P, Mayer, T M, & Swartzentruber, B S. Selective area growth of metal nanostructures. United States. doi:10.1063/1.115861.
Adams, D P, Mayer, T M, and Swartzentruber, B S. Mon . "Selective area growth of metal nanostructures". United States. doi:10.1063/1.115861.
@article{osti_279975,
title = {Selective area growth of metal nanostructures},
author = {Adams, D P and Mayer, T M and Swartzentruber, B S},
abstractNote = {Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent chemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydrogen. Exposure to Fe(CO){sub 5} at 275{degree}C results in preferential deposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact in surrounding areas. Fe metal lines with widths {approximately}10 nm are constructed using this selective-area, autocatalytic growth technique.},
doi = {10.1063/1.115861},
journal = {Applied Physics Letters},
number = 16,
volume = 68,
place = {United States},
year = {1996},
month = {4}
}