Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software
In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.
- Research Organization:
- Univ. of Texas, Austin, TX (United States)
- Sponsoring Organization:
- USDOE; US Air Force Office of Scientific Research (AFOSR)
- DOE Contract Number:
- EE0008322
- Assignee:
- Board of Regents, The University of Texas System (Austin, TX)
- Patent Number(s):
- 11,650,222
- Application Number:
- 17/490,925
- OSTI ID:
- 1998375
- Country of Publication:
- United States
- Language:
- English
Highly parallel scanning tunneling microscope based hydrogen depassivation lithography
|
journal | November 2018 |
Similar Records
Controlled removal of hydrogen atoms from H-terminated silicon surfaces