Total ionizing dose effects of Ge channel pFETs with raised Si_0.55Ge_0.45 source/drain

Journal Article · Mon Nov 30 23:00:00 EST 2015 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2015.2489019· OSTI ID:1265976

Hachtel, Jordan A. ^[1]; Chisholm, Matthew F. ^[2]; Pantelides, Sokrates T. ^[1]; Wang, Liang ^[3]; Zhang, En Xia ^[1]; Schrimpf, Ronald D. ^[1]; Fleetwood, Daniel M. ^[1]; Duan, Guo Xing ^[1]; Zhang, Cher Xuan ^[1]; Reed, Robert A. ^[1]; Samsel, Isaak K. ^[1]; Alles, Michael L. ^[1]; Witters, Lisbeth ^[4]; Collaert, Nadine ^[4]; Linten, Dimitri ^[4]; Mitard, Jerome ^[4]; Galloway, Kenneth F. ^[1]

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1. Vanderbilt Univ., Nashville, TN (United States)
2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
3. Vanderbilt Univ., Nashville, TN (United States); Beijing Microelectronics Technology Institute, Beijing (China)
4. IMEC, Kapeldreef, Leuven (Belgium)

The total ionizing dose response of Ge channel pFETs with raised Si_0.55Ge_0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Here, nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1265976
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 62; ISSN 0018-9499
• Publisher: Institute of Electrical and Electronics Engineers (IEEE)
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS