Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Zhang, En Xia; Fleetwood, Daniel M.; Hachtel, Jordan A.; Liang, Chundong; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Linten, Dimitri; Mitard, Jerome; Chisholm, Matthew F.; Pantelides, Sokrates T.

doi:10.1109/TNS.2016.2635023

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Journal Article · Fri Dec 02 00:00:00 EST 2016 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2016.2635023· OSTI ID:1347337

Zhang, En Xia ^[1]; Fleetwood, Daniel M. ^[1]; Hachtel, Jordan A. ^[2]; Liang, Chundong ^[1]; Reed, Robert A. ^[1]; Alles, Michael L. ^[1]; Schrimpf, Ronald D. ^[1]; Linten, Dimitri ^[3]; Mitard, Jerome ^[3]; Chisholm, Matthew F. ^[4]; Pantelides, Sokrates T. ^[2]

Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO₂) show minimal transconductance degradation (less than 5%), very small V_th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); Air Force Research Laboratory (AFRL); Defense Threat Reduction Agency (DTRA); USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Contributing Organization:: Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1347337

Alternate ID(s):: OSTI ID: 1597805

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 64; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability Wang, Jianing; An, Xia; Ren, Zhexuan Semiconductor Science and Technology, Vol. 34, Issue 10 https://doi.org/10.1088/1361-6641/ab3a73	journal	September 2019

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