Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Zhang, En Xia; Fleetwood, Daniel M.; Hachtel, Jordan A.; Liang, Chundong; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Linten, Dimitri; Mitard, Jerome; Chisholm, Matthew F.; Pantelides, Sokrates T.

doi:10.1109/TNS.2016.2635023

Title: Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Journal Article · Fri Dec 02 00:00:00 EST 2016 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2016.2635023· OSTI ID:1347337

Zhang, En Xia ^[1]; Fleetwood, Daniel M. ^[1]; Hachtel, Jordan A. ^[2]; Liang, Chundong ^[1]; Reed, Robert A. ^[1]; Alles, Michael L. ^[1]; Schrimpf, Ronald D. ^[1]; Linten, Dimitri ^[3]; Mitard, Jerome ^[3]; Chisholm, Matthew F. ^[4]; Pantelides, Sokrates T. ^[2]

Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad (SiO 2 ) show minimal transconductance degradation (less than 5%), very small V th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<;5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Air Force Research Laboratory (AFRL); US Air Force Office of Scientific Research (AFOSR); Defense Threat Reduction Agency (DTRA)

Contributing Organization:: Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1347337

Alternate ID(s):: OSTI ID: 1597805

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 64, Issue 1; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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73 NUCLEAR PHYSICS AND RADIATION PHYSICS
total ionizing dose
10 keV X-ray
geometry dependence
germanium FinFETs

Title: Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

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