Total Ionizing Dose Effects on Ge Channel $$p$$FETs with Raised $${\rm Si}_{0.55}{\rm Ge}_{0.45}$$ Source/Drain
Journal Article
·
· IEEE Transactions on Nuclear Science
- Beijing Microelectronics Technology Institute, Beijing (China)
- Vanderbilt Univ., Nashville, TN (United States)
- Imec, Leuven (Belgium)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Here, the total ionizing dose response of Ge channel pFETs with raised Si0.55Ge0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1399555
- Alternate ID(s):
- OSTI ID: 1265976
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 62; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Total ionizing dose effects of Ge channel pFETs with raised Si0.55Ge0.45 source/drain
SEGR in SiO${}_2$ $_3$ $_4$
Crystal Growth and Scintillation Properties of${\rm Cs}_{2}{\rm NaGdBr}_{6}{:}{\rm Ce}^{3+}$
Journal Article
·
Mon Nov 30 23:00:00 EST 2015
· IEEE Transactions on Nuclear Science
·
OSTI ID:1265976
SEGR in SiO
Journal Article
·
Thu Apr 17 00:00:00 EDT 2014
· IEEE Transactions on Nuclear Science
·
OSTI ID:1143834
Crystal Growth and Scintillation Properties of
Journal Article
·
Tue Apr 02 00:00:00 EDT 2013
· IEEE Transactions on Nuclear Science
·
OSTI ID:1426915