Total Ionizing Dose Effects on Ge Channel $$p$$FETs with Raised $${\rm Si}_{0.55}{\rm Ge}_{0.45}$$ Source/Drain

Journal Article · Thu Dec 17 00:00:00 EST 2015 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2015.2489019· OSTI ID:1399555

Wang, Liang ^[1]; Zhang, En Xia ^[2]; Schrimpf, Ronald D. ^[2]; Fleetwood, Daniel M. ^[2]; Duan, Guo Xing ^[2]; Hachtel, Jordan A.  ^[2]; Zhang, Cher Xuan ^[2]; Reed, Robert A. ^[2]; Samsel, Isaak K. ^[2]; Alles, Michael L. ^[2]; Witters, Liesbeth ^[3]; Collaert, Nadine ^[3]; Linten, Dimitri ^[3]; Mitard, Jerome ^[3]; Chisholm, Matthew F.  ^[4]; Pantelides, Sokrates T. ^[2]; Galloway, Kenneth F. ^[2]

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1. Beijing Microelectronics Technology Institute, Beijing (China)
2. Vanderbilt Univ., Nashville, TN (United States)
3. Imec, Leuven (Belgium)
4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Here, the total ionizing dose response of Ge channel pFETs with raised Si_0.55Ge_0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1399555
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 62, Issue 6; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
Ge pFET
negative bias temperature instability (NBTI)
radiation-induced leakage
threshold-voltage shift
total ionizing dose (TID)
transconductance degradation